Interrelations between Threshold Voltage Definitions and Extraction Methods
نویسندگان
چکیده
This paper presents a brief discussion on the main MOSFET definitions of threshold voltage available in the literature and associated extraction methodologies. We have taken advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential φS to inversion charge density I Q′ in all regions of operation. A new robust and precise extraction method based on the transconductance-to-current ratio characteristic is reviewed, compared with already existing methods, and experimentally verified in a 0.18 μm CMOS technology.
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